| abstract |
Provided is a semiconductor device having a single crystal GaN film close to intrinsic and selectively doped with n-type or p-type film. A semiconductor device having the following elements: a substrate comprising (100) silicon, (111) silicon, (0001) sapphire, (11-20) sapphire, (1-102) sapphire, (111) gallium arsenide, (100) gallium arsenide, magnesium oxide, zinc oxide, and a material selected from the group consisting of silicon carbide; a non-single crystal buffer layer having a thickness of about 200 to about 500 The buffer layer includes a first material grown on the substrate, the first material including gallium nitride; and a first growth layer grown on the buffer layer, The first growth layer includes gallium nitride and a first doped material. [Selection] Figure 1 |