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filingDate 2008-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7acad5c5309007e5a970a5d6d58ab47b
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publicationDate 2010-04-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2010087108-A
titleOfInvention Porous silicon layer and manufacturing method thereof
abstract A method for producing a porous silicon layer of a silicon substrate using an anodizing solution that is easy to handle. An anodizing method in which a single crystal silicon substrate is immersed in a chemical conversion treatment liquid and a porous silicon layer is formed on the surface of the silicon substrate by passing an electric current using the substrate as an anode, wherein the chemical conversion treatment liquid includes ammonium fluoride and An aqueous solution containing at least one of potassium fluoride and at least one of phosphoric acid, sulfuric acid, and acetic acid is used. [Selection] Figure 1
priorityDate 2008-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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