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filingDate 2008-09-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2010-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2010067647-A
titleOfInvention Manufacturing method of semiconductor device
abstract A second rewiring layer electrically connected to the first rewiring layer via the via portion in a desired pattern without leaving a resist film in the via portion of the first rewiring layer. A method for manufacturing a semiconductor device that can be formed is provided. A region A corresponding to a region where a second redistribution layer 22 of a second resist film 34 is formed is irradiated with exposure light 38. Subsequently, the exposure light 38 is irradiated to the region B corresponding to the region where the second opening 20a of the second resist film 34 is formed. The second resist film 34 in the region B located inside the region A is subjected to multiple exposure, and the exposure reaches the depth direction. The second resist film 34 exposed by the development process is removed, and the second resist film 34 is patterned into a desired rewiring pattern. The resist film 34 in the second opening 20a and the resist film 34 in the recess of the first via portion 18a are also removed. [Selection] Figure 2
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014534470-A
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015133523-A
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