| abstract |
The present invention provides a semiconductor light emitting device excellent in electrode bondability and easily manufactured, and a manufacturing method thereof and a lamp. A substrate, a laminated semiconductor layer, one electrode formed on an upper surface of a laminated semiconductor layer, and a semiconductor layer exposed surface formed by cutting out a part of the laminated semiconductor layer. And the other electrode 108 is formed on the upper surface 106c of the stacked semiconductor layer 20 or the semiconductor layer exposed surface 104c. The semiconductor light emitting device 1 is provided with an ohmic junction layer 9 formed on the substrate, a junction layer 110 formed on the ohmic junction layer 9, and a bonding pad electrode 120 formed so as to cover the junction layer 110. [Selection] Figure 1 |