| abstract |
A semiconductor device in which boron is diffused does not vary in resistance value, boron can be diffused at a high concentration, and contamination of the semiconductor device by sodium can be avoided. A boron diffusion coating solution is provided. A boron diffusion coating liquid comprising (a) a boron compound, (b) a polyvinyl alcohol resin having a sodium content of 10 ppm or less, and (c) water. [Selection figure] None |