| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_242cc8d15c771395b920cc7de452da6a |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-338
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-812
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778 |
| filingDate |
2008-08-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e53fd8980f66ae90bf15b9e82a51f59e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b521bb939ec938999b64a68426460e9e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3fa0fb83d8f461414f80f80d0054c8bc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_97cf5f5b970495ec2740b4829eefdff3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c7e2b88a208e9ad28fd00477f5078392 |
| publicationDate |
2010-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2010062168-A |
| titleOfInvention |
High-frequency semiconductor element, epitaxial substrate for forming high-frequency semiconductor element, and method for producing epitaxial substrate for forming high-frequency semiconductor element |
| abstract |
An epitaxial substrate capable of realizing a semiconductor element for high-frequency operation having cost merit and excellent characteristics is provided. An insulating layer made of SiC having a specific resistance of 1 × 10 6 Ωcm or more is formed on a base material made of SiC having conductivity by doping vanadium to form a base substrate. obtain. On the lower fabric substrate, a buffer layer made of AlN, a channel layer made of GaN, and Al x In y Ga z N ( x + y + z = 1) consisting of a barrier layer is epitaxially formed. [Selection] Figure 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019117908-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110739207-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200033982-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2014196466-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022041157-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9882042-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10347755-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3312870-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2023008031-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160015244-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9245944-B2 |
| priorityDate |
2008-08-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |