| abstract |
An object of the present invention is to form a thin film growth nucleus on a substrate by eliminating a high temperature process in an atmospheric pressure environment, reducing the throughput, and further eliminating the waste of the thin film growth nucleus. Provided is a film manufacturing method capable of reducing the cost of film manufacturing equipment and the film manufacturing cost by forming growth nuclei. A solution or suspension of a substance containing a metal or semiconductor constituent element or an ion comprising the element in the composition is applied onto a substrate, dried, and then exposed to atmospheric pressure hydrogen plasma. By processing, a thin film growth nucleus for forming a thin film on the substrate is formed. [Selection] Figure 1 |