abstract |
A novel photoresist compound used for fine processing utilizing photolithography, a photoresist solution using the photoresist compound, and a desired surface using the photoresist solution Of an etching method for etching. A compound represented by the following general formula (A): [In General Formula (A), X 1 and X 2 represent an oxygen atom, etc., m and n represent an integer in the range of 0 to 3, R 1 to R 3 represent a hydrogen atom or a substituent, L 1 and L 2 represent a divalent linking group. ] [Selection figure] None |