| abstract |
PROBLEM TO BE SOLVED: To provide a precursor composition, a thin film forming method, a gate structure manufacturing method using the same, and a capacitor manufacturing method. A thin film forming composition, a thin film forming method, a gate structure manufacturing method, and a capacitor manufacturing method that can be used for manufacturing a semiconductor device. The thin film forming method includes a precursor and an electron donating compound. After providing the stabilized precursor on the substrate (S20), a reactive material capable of forming a bond with the precursor is introduced onto the substrate to form a thin film (S30). The precursor stabilized by the electron donating compound can form a thin film having excellent thermal stability and excellent step coverage. The safety, efficiency and reliability of the semiconductor manufacturing process can be improved. [Selection] Figure 1 |