http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010045416-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-47 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-812 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-338 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-872 |
| filingDate | 2009-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ec4aa3f1ba55f9f1eb9f7318cc65fc3a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_28d88028020e9e88f2b023b18955236f |
| publicationDate | 2010-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2010045416-A |
| titleOfInvention | Group III nitride electronic devices |
| abstract | A low-loss gallium nitride electronic device is provided. In A III nitride hetero-junction transistor 11a, a second Al Y1 In Y2 Ga 1-Y1 -Y2 N layer 15, the first Al X1 In X2 Ga 1-X1 -X2 N layer 13a And a heterojunction 21 is formed. The first electrode 17 forms a Schottky junction with the first Al X1 In X2 Ga 1-X1-X2 N layer 13a. The first Al X1 In X2 Ga 1-X1-X2 N layer 13 a and the second Al Y1 In Y2 Ga 1 -Y1-Y2 N layer 15 are provided on the substrate 23. The electrodes 17a, 18a, and 19a include a source electrode, a gate electrode, and a drain electrode, respectively. The carbon concentration N C13 of the first Al X1 In X2 Ga 1-X1-X2 N layer 13a is less than 1 × 10 17 cm −3 . The dislocation density D of the second Al Y1 In Y2 Ga 1 -Y1-Y2 N layer 15 is 1 × 10 8 cm −2 . A two-dimensional electron gas layer 25 is generated by the heterojunction 21. [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9117743-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012033679-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2514918-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2013157547-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2514918-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013222808-A |
| priorityDate | 2009-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 34.