http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010045175-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0950e9df7f0e1b73efee1bda859951ad |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-40117 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-30 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115 |
| filingDate | 2008-08-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d8d642a0eee10d0757cca8de4275967a |
| publicationDate | 2010-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2010045175-A |
| titleOfInvention | Nonvolatile semiconductor memory device |
| abstract | Degradation of characteristics of a memory cell transistor can be suppressed. A nonvolatile semiconductor memory device includes first and second memory cell transistors MT1 and MT2 partitioned by an element isolation insulating film 5a and a barrier insulating film 6a covering the element isolation insulating film, and includes a first memory. The cell transistor includes a first tunnel insulating film 2a-1, a first charge storage layer 3a-1 made of an insulating film, a first block insulating film 8a, and a first gate electrode 9a, and the second memory cell transistor is a second memory cell transistor. A tunnel insulating film 2a-2, a second charge storage layer 3a-2 made of an insulating film, a second block insulating film 8a, and a second gate electrode 9a are provided, and the barrier insulating film is formed on the first and second charge storage layers. The film thickness is smaller than that of the first and second charge storage layers. [Selection] Figure 2 |
| priorityDate | 2008-08-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.