http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010034601-A

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filingDate 2009-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b3d8278c0803923b0cb8d21eed310682
publicationDate 2010-02-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2010034601-A
titleOfInvention Manufacturing method of semiconductor device
abstract As a pitch between bumps of a semiconductor chip of a high-frequency semiconductor device is miniaturized, a short circuit between bumps can be prevented by a simple method, and low stress is applied when a semiconductor chip and a circuit board are connected by flip chip. Therefore, a method for manufacturing a semiconductor device with high bonding reliability is desired. In a manufacturing method of a semiconductor device in which a semiconductor element having a plurality of protruding metal electrodes is mounted face-down on a circuit board, at least the entire surface portion of the protruding metal electrodes is covered with a solidified insulating film, and the insulating film is used. The coated top of the protruding metal electrode was ground using a hard bite to expose the protruding metal electrode, and to be flat and smooth, and formed on the protruding metal electrode of the semiconductor element and the circuit board The electrode terminals are arranged opposite to each other, and a load is applied to the semiconductor element to join the protruding metal electrode and the electrode terminal on the circuit board. [Selection] Figure 4
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Total number of triples: 22.