http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010028100-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d5d04736b0b882a4f5a1e0e0e4cd8cbb |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-49107 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-3025 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48257 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48091 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48247 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-45144 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-38 |
| filingDate | 2009-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_40285182bbe780e025bb6ea6a123a62e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_060acea6d95ca276a64367cf9542a92f |
| publicationDate | 2010-02-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2010028100-A |
| titleOfInvention | Semiconductor light emitting device, electrode thereof, manufacturing method and lamp |
| abstract | An object of the present invention is to provide a semiconductor light emitting device having an electrode with improved bonding properties and corrosion resistance, a method for manufacturing the same, and a lamp. A substrate, a laminated semiconductor layer including a light emitting layer formed on the substrate, one electrode 111 formed on an upper surface of the laminated semiconductor layer, and a part of the laminated semiconductor layer are notched. And a bonding pad electrode 120 formed so that one electrode 111 covers the bonding layer 110 and the other electrode formed on the exposed surface of the semiconductor layer. The bonding pad electrode 120 is thicker than the bonding layer 110 and has one or more layers, and the bonding layer 110 and the bonding pad electrode 120 have outer peripheral portions 110d and 120d on the outer peripheral side. By using a semiconductor light emitting device having inclined surfaces 110c, 117c, and 119c formed such that the film thickness gradually decreases toward the It can be determined. [Selection] Figure 4 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9000469-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-5780242-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013243253-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018525822-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013168592-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2012077407-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10263155-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014044971-A |
| priorityDate | 2008-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 54.