http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010027924-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 |
| filingDate | 2008-07-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_82d7ec343f8f9b0415970bc6b6c443cf http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_30852e6bdb59006771c3ffe7b222dd2d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_81ae55a8fb2d20e14fd1059131a1e225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fb9c65e4b3d3c8af59f2c76dab0752b1 |
| publicationDate | 2010-02-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2010027924-A |
| titleOfInvention | Group III nitride light emitting diode |
| abstract | A group III nitride light-emitting diode having a quantum well structure capable of emitting polarized light is provided. In a light emitting diode, a main surface of a substrate is inclined from the c-plane at an angle of not less than 10 degrees and not more than 60 degrees in the a-axis or m-axis direction of the group III nitride. The main surface 13a is a semipolar surface. Since the barrier layer 23 is made of GaN or the like, the lattice constant D B of the barrier layer 23 can be made smaller than the lattice constant D W of the InAlGaN well layer 21. A large compressive strain can be applied to the InAlGaN well layer 21. Compressive strain is effective for increasing the degree of polarization. The quantum confinement property can be weakened by adjusting the thickness of the InAlGaN well layer in the multiple quantum well structure of the active layer. Since the thickness of the InAlGaN well layer exceeds 5 nm, strong quantum confinement is not exhibited due to the well thickness. [Selection] Figure 3 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9490391-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101916032-B1 |
| priorityDate | 2008-07-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.