| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b73bb5b611ad02b686a7967bc6ca3412 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0625
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0264
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-028
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-04252 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-04256
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-347
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y20-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-16 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-028
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-0625 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-347
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-323
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-042
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-026 |
| filingDate |
2009-10-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a5e34be175a594ea2c37eaa0716b3ce4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b47540ce2c296817255a091113ad9ee1 |
| publicationDate |
2010-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2010010713-A |
| titleOfInvention |
II-VI laser diode with end face deterioration reduction structure |
| abstract |
A semiconductor main body having a plurality of semiconductor layers forming a pn junction, an end face at one end of the main body, and end face deterioration of an II-VI semiconductor laser diode having a reference electrode are reduced. The laser diode further includes an end face deterioration reducing electrode disposed adjacent to the end face. The end face deterioration reducing electrode 50 is electrically separated from the forward bias electrode 40. The end face deterioration reducing electrode 50 is used to establish an electric field sufficient to reduce end face deterioration. In one embodiment, such an electric field is established by applying a reverse bias voltage V RB between the end face degradation reducing electrode 50 and the verification electrode 32. In another embodiment, such an electric field is established by electrically connecting the end face degradation reducing electrode 50 to the verification electrode 32. [Selection] Figure 1 |
| priorityDate |
1997-11-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |