http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010002633-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cebc9740ef706cde29e885504f274ffa |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate | 2008-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5ea00934073afcda034ea234b7bc3f6e |
| publicationDate | 2010-01-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2010002633-A |
| titleOfInvention | Resist composition |
| abstract | PROBLEM TO BE SOLVED: To provide a resist composition with few development defects (defects) in ArF excimer laser lithography or the like. A resist composition comprising a polymer that reacts with an acid and becomes alkali-soluble, comprising: The developer is diluted to 10% by mass with water rather than the volume average particle size of the insoluble matter contained in the alkali developer after the exposure and development of the resist composition containing the polymer that reacts with the acid and becomes alkali-soluble. A resist composition having a small volume average particle size of the insoluble matter contained in the prepared aqueous solution. [Selection figure] None |
| priorityDate | 2008-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 137.