http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009539239-A
Outgoing Links
Predicate | Object |
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classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-957 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5223 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-84 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-481 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1203 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04 |
filingDate | 2007-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2009-11-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2009539239-A |
titleOfInvention | Semiconductor integrated circuit device having high Q wafer backside capacitor (integrated circuit device and method of forming integrated circuit device) |
abstract | PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device having a high-Q wafer backside capacitor. A method of manufacturing a semiconductor integrated circuit (IC) chip having a high Q on-chip capacitor formed on the back surface of the chip and connected to the integrated circuit on the front surface of the chip using through-wafer interconnects. I will provide a. In one aspect, a semiconductor device includes a semiconductor substrate having a front surface, a back surface, and a buried insulating layer interposed between the front and back surfaces of the substrate. An integrated circuit is formed on the front side of the semiconductor substrate, an integrated capacitor is formed on the back side of the semiconductor substrate, and an interconnect structure is formed through the buried insulating layer to connect the integrated capacitor to the integrated circuit. [Selected figure] Figure 2 |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019508878-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017527977-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012079961-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019510486-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7028785-B2 |
priorityDate | 2006-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.