| Predicate |
Object |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-02 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B37-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K3-14 |
| filingDate |
2007-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2009-08-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2009530853-A |
| titleOfInvention |
Halide anion for controlling metal removal rate |
| abstract |
The chemical mechanical polishing system of the present invention includes an abrasive component, a liquid carrier, an oxidizing agent, and a halogen anion. The method of the present invention includes chemical mechanical polishing the substrate with a polishing system. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020166676-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011517507-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011508423-A |
| priorityDate |
2006-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |