| abstract |
An avalanche mode photodiode array 102 is manufactured using a silicon-on-insulator wafer and a substrate transfer process. The array includes a plurality of photodiodes 100. The photodiode 100 includes an electrically insulating layer 206, a depletion region 204, and a first doped region 208 and a second doped region 210. Interconnect layer 212 includes electrodes 214 and 216 that provide electrical connection to the photodiode. The photodiode array 102 is carried by the handle wafer 217. |