| abstract |
PROBLEM TO BE SOLVED: To provide a semiconductor device structure having low-performance and high-performance devices of the same conductivity type on the same substrate. A method of manufacturing a semiconductor device structure includes a step of preparing a substrate (10), a first gate (G1) including a first spacer (SP), and a second gate including a second spacer (SP). (G2), a source (S) / drain (D) region of the same conductivity type adjacent to the first gate and the second gate, and an isolation region (STI) disposed between the first gate and the second gate. ), And forming silicide on the substrate overlying the first gate, the second gate, and the respective source and drain regions, and additional spacers (on the first spacer to produce an intermediate structure) RSPS) and then placing a stress layer over the entire intermediate structure. [Selection] Figure 7 |