| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_347b5a7147a5d96032eda0149bc9a798 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y25-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01F10-3254 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01F41-308
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-01 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11B5-39
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8246
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105 |
| filingDate |
2009-07-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_95b9e3147e08ab89c15120e7ca4db034
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d500b6d02b9f7001fabffa6c034268e3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_48fca71e1b76e4953ed04a9f92fa4a0f |
| publicationDate |
2009-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2009302550-A |
| titleOfInvention |
Magnetoresistive element manufacturing apparatus |
| abstract |
Provided is a magnetoresistive element manufacturing apparatus capable of preventing deterioration of magnetic characteristics of a multilayer magnetic film having a damaged layer and capable of manufacturing a high-quality magnetoresistive element. A magnetoresistive effect element comprising: a reactive ion etching chamber; a radical processing chamber; and a vacuum transfer chamber having transfer means capable of transferring a substrate between the reactive ion etching chamber and the radical processing chamber. In the manufacturing apparatus, a first step of carrying a magnetoresistive element having a magnetic film and a substrate into the reactive ion etching chamber is carried out in the vacuum transfer chamber by the transfer means. Second steps 101 and 102 for etching a predetermined region of the film by reactive ion etching in the presence of hydrogen atoms and oxygen atoms activated by plasma are performed. In the radical processing chamber, after the second step, A third step 103 is performed in which the magnetic film is exposed to plasma having an ion current density of 4 × 10 −7 A / cm 2 or less. [Selection] Figure 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190143845-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101968346-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014063913-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8586390-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11789357-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017123355-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11276816-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20130043587-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10157961-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2015045205-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11678583-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-5824189-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10243140-B2 |
| priorityDate |
2006-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |