| abstract |
A field effect transistor having high electron mobility, low leakage current, and low on-resistance, and a method for manufacturing the field effect transistor are provided. A field effect transistor having a MOS structure, a p-type nitride compound semiconductor layer formed on a substrate, an n-type contact region located under a source electrode and a drain electrode and formed by ion implantation, Layered by epitaxial growth on the p-type nitride compound semiconductor layer and formed so that one end is adjacent to the n-type contact region on the drain electrode side and the other end overlaps the drain electrode side of the gate electrode And an electric field relaxation layer made of an n-type nitride compound semiconductor having a carrier concentration lower than that of the n-type contact region. [Selection] Figure 1 |