http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009302528-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6f1cdac90c4272d2ed510122d7153738 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7853 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66621 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate | 2009-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fc40a03356de665b6d9d7a8f54f87d42 |
| publicationDate | 2009-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2009302528-A |
| titleOfInvention | Method for forming triple gate of semiconductor device |
| abstract | Semiconductor device gate forming method capable of preventing deterioration of device characteristics and reliability caused by plasma etching process, and electric field concentration phenomenon at upper corners caused by plasma etching process A method for forming a gate of a semiconductor device is provided. A step of providing a support substrate; a substrate made of a buried insulating layer and a semiconductor layer; etching the semiconductor layer in a vapor etching process to form first and second trenches separated from each other; A method of forming a triple gate of a semiconductor device, comprising: forming a gate insulating film on an upper surface of the substrate including a first trench and a second trench; and forming a gate conductive film on the gate insulating film. [Selection] Figure 4 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012009799-A |
| priorityDate | 2008-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.