| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1af8df51ce24ca931ae718fb747f6aa0 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02378 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02639
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02389
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-343 |
| filingDate |
2008-05-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_57481ad703d7547036ffeaa9e8aca213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d26f7bf38ec916df89e5995f96910fb6 |
| publicationDate |
2009-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2009283807-A |
| titleOfInvention |
Structure including nitride semiconductor layer, composite substrate including nitride semiconductor layer, and manufacturing method thereof |
| abstract |
A structure including a nitride semiconductor layer with reduced threading dislocations, a composite substrate including the nitride semiconductor layer, a manufacturing method thereof, and the like are provided. A structure including a nitride semiconductor layer, comprising: Having a laminated structure of at least two nitride semiconductor layers; A plurality of cavities surrounded by a wall surface including an inner wall of a concave portion of a concavo-convex pattern formed on the nitride semiconductor layer on the lower layer side of the two nitride semiconductors, between the two nitride semiconductor layers in the stacked structure Have A portion in which the crystallinity that suppresses the lateral growth of the nitride semiconductor layer is disturbed is formed on at least a part of the inner wall of the recess that forms the cavity. [Selection] Figure 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9231057-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017092082-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013004768-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9006013-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2017077961-A1 |
| priorityDate |
2008-05-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |