| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G06K19-077
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G06K19-07 |
| filingDate |
2008-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6295192012e7b0ed39e88002b8734a2d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8bb761a089dba691e10fe050a316ea73
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eee9961b51571967dc67c5e29fc67329
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_89ce31d3641e61d30984549171309fd4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_756d2c0a37f2afa1c19a49f9950bbe53 |
| publicationDate |
2009-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2009283777-A |
| titleOfInvention |
Semiconductor device |
| abstract |
An object is to provide a highly reliable semiconductor device that is resistant to external stress and electrostatic discharge while achieving thinning and miniaturization. Another object is to manufacture a semiconductor device with high yield by preventing defects in shape and characteristics due to external stress or electrostatic discharge in a manufacturing process. A pair of conductive shields that covers a semiconductor integrated circuit so as to sandwich the semiconductor integrated circuit prevents electrostatic breakdown (malfunction of the circuit or damage to a semiconductor element) due to electrostatic discharge of the semiconductor integrated circuit. In addition, with a pair of insulators that sandwich the semiconductor integrated circuit, a highly reliable semiconductor device having durability while achieving thinning and downsizing can be provided. Further, also in the manufacturing process, defects in shape and characteristics due to external stress or electrostatic discharge can be prevented, and a semiconductor device can be manufactured with high yield. [Selection] Figure 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015501078-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019012857-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020017754-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013058770-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018049265-A |
| priorityDate |
2008-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |