http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009283749-A

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filingDate 2008-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_10941373b6a864097266d70055b7c335
publicationDate 2009-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2009283749-A
titleOfInvention Semiconductor device and method for producing semiconductor device
abstract An object of the present invention is to provide a method for efficiently repairing a region where a defect is generated in a single crystal semiconductor layer and forming a single crystal semiconductor layer over a supporting substrate without impairing the transistor characteristics of the region. After forming a single crystal semiconductor layer over a supporting substrate, a defect region generated in the single crystal semiconductor layer is detected by optical means, and a non-single crystal semiconductor is formed on the single crystal semiconductor layer and in the defect region. Forming a crystalline semiconductor layer by selectively crystallizing a non-single crystalline semiconductor layer in the defective region based on the information on the defective region and circuit design information, and forming the crystalline semiconductor layer, Alternatively, a process for forming a semiconductor element including the single crystal semiconductor layer is performed. [Selection] Figure 3
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017034285-A
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