| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0950e9df7f0e1b73efee1bda859951ad |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-35
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-30 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788 |
| filingDate |
2008-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_87a618d4b2075c7ef1f9b7238d3b00c4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3d773ca45e509027c07af2ec4e6cb64a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_777dd4453a74a53f17a29cf224232023 |
| publicationDate |
2009-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2009283707-A |
| titleOfInvention |
Semiconductor device |
| abstract |
A select gate provided for a memory cell is improved in controllability of the select gate without increasing the gate length of the select gate. In one embodiment of the present invention, in a semiconductor device including a selection gate S1 provided for a memory cell A1, an upper surface of a gate insulating film 9 formed over a channel of the selection gate S1 is selected by a selection gate S1. It is higher than part or all of the upper surface of the element isolation region 10 and has a tri-gate structure. [Selection] Figure 2 |
| priorityDate |
2008-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |