http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009277918-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_063a1b324005ddc15e16e7529c6258c4 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-323 |
| filingDate | 2008-05-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9d3eb81509774cbc73ee8144e8b1127f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e09e82d3ecb9bc0db008a4f14b3695c3 |
| publicationDate | 2009-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2009277918-A |
| titleOfInvention | Semiconductor laser device |
| abstract | A nitride semiconductor laser device with improved vertical transverse mode characteristics is realized. A semiconductor laser device includes a substrate, a first clad layer, an active layer, and a second clad layer that are formed on the substrate and are sequentially stacked from the substrate. A nitride semiconductor layer 12 having a stripe-shaped waveguide region extending in a direction, and at least one of the pair of end surfaces intersecting the resonator direction in the substrate 11 on the end surface on the light emitting side. And a light absorption layer 31 covering the lower region. [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012054474-A |
| priorityDate | 2008-05-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.