| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_063a1b324005ddc15e16e7529c6258c4 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76832
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5222
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7682
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53295
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 |
| filingDate |
2008-05-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_562794387f352e96913e037e2840e5da
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eaad94406086457f4ff1a70ab1e4132f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ee84887d800f9139b9271c25cc476e24 |
| publicationDate |
2009-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2009277729-A |
| titleOfInvention |
Semiconductor device and manufacturing method of semiconductor device |
| abstract |
A semiconductor device having a practically sufficient operation speed and electromigration resistance is manufactured. An interlayer insulating film is formed on an upper surface of a semiconductor substrate, and a lower layer wiring is formed in the interlayer insulating film. A liner insulating film 106 is formed on the upper surface of the interlayer insulating film 101 and the upper surface of the lower layer wiring 105, and an interlayer insulating film 108 is formed on the upper surface of the liner insulating film 106. An upper wiring 113 is formed in the interlayer insulating film 108, and the lower wiring 105 and the upper wiring 113 are connected via a via 109. The liner insulating film 106 formed in the via peripheral region 140 is thicker than the liner insulating film 106 formed outside the via peripheral region 140. [Selection] Figure 1 |
| priorityDate |
2008-05-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |