http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009272629-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ed76131ddda07950fa9ba87fba15eeb6 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-04257 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-025 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-04253 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0421 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-32341 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-42 |
| filingDate | 2009-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_76bd15f14355e5215cfec1020e52e747 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_82799c70bade1e4b3900ed1e948404d2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6a8ace1f0f5d94c2c07cb92506153eb2 |
| publicationDate | 2009-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2009272629-A |
| titleOfInvention | Semiconductor device emitting radiation |
| abstract | The present invention includes an active layer, a p-type conductive layer, a transparent conductive layer (TCL), and a non-p-type ohmic contact layer used to generate radiation. A semiconductor device that emits radiation is provided. A p-type conductive layer is formed on an active layer, a transparent conductive layer is formed on a p-type conductive layer, and a non-p-type ohmic contact layer is located between the p-type conductive layer and the transparent conductive layer. This non-p-type ohmic contact layer is used to lower the operating voltage of a semiconductor element that emits radiation. In addition, the non-p-type ohmic layer provided by the present invention is an Al x Ga y In (1-xy) N quaternary alloy, and the aluminum component contained in the quaternary alloy is a band of the non-p-type ohmic contact layer. The gap can be made larger than the active layer, thereby reducing the light absorption effect of the non-p-type ohmic contact layer. [Selection] Figure 1 |
| priorityDate | 2008-05-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 43.