http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009272545-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5520dd38cc403678d9f91e0b0ee95fb |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115 |
filingDate | 2008-05-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4f96ea7b26490eda6a3c02b6dcf58325 |
publicationDate | 2009-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2009272545-A |
titleOfInvention | Nonvolatile semiconductor memory device and manufacturing method thereof |
abstract | An object of the present invention is to provide a nonvolatile semiconductor memory device capable of storing 2 bits per memory cell. A pair of impurity diffusion regions sandwiching a channel region provided in a surface layer of a semiconductor substrate, a pair of charge holding films sandwiching a gate insulating film provided on the channel region in a channel length direction, and a gate insulating film And at least two memory cells adjacent to each other in the channel length direction and the channel width direction, and adjacent to each other in the channel length direction. An impurity diffusion region between memory cells is shared by adjacent memory cells, and a word line shared by memory cells adjacent in the channel length direction is provided on the gate electrode of the memory cell adjacent in the channel length direction, The above problem is caused by the nonvolatile semiconductor memory device in which the impurity diffusion region is shared as a bit line in each memory cell adjacent in the channel width direction. Resolve. [Selection] Figure 1 |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009283740-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9461162-B2 |
priorityDate | 2008-05-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.