http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009272496-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d78fe473c8a29219129bbc8bb50f6a59 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 |
| filingDate | 2008-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8489bf1ca0e22080654205f70dc31199 |
| publicationDate | 2009-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2009272496-A |
| titleOfInvention | Vapor growth apparatus and thin film vapor growth method |
| abstract | Provided are a vapor phase growth apparatus and a thin film vapor phase growth method capable of vapor-phase growth of a thin film having a uniform film thickness by an easy means without risk of metal contamination. An apparatus for placing a wafer on a susceptor and vapor-depositing a thin film on the wafer, comprising at least a reaction chamber for vapor-phase growth, and a plurality of source gases introduced into the reaction chamber. A flow path, a discharge port for exhausting gas from the reaction chamber, a susceptor on which a wafer is placed, and a heating means for heating the wafer, wherein the plurality of flow paths supply source gas to each flow path. It is to be individually supplied to the reaction chamber, and is provided with an adjusting mechanism for individually controlling the flow rate for each flow path, and further changing the flow rate ratio of the raw material gases in the plurality of flow paths. A vapor phase growth apparatus comprising a control mechanism for controlling. [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016213242-A |
| priorityDate | 2008-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 17.