| abstract |
A semiconductor device capable of suppressing generation of dark current and suitable for a current driving element such as an organic EL, a method for manufacturing the semiconductor device, and a display device including the semiconductor device are provided. The semiconductor device includes a substrate and a semiconductor layer having a channel region, and the channel region satisfies Vc / Va> 4 when a volume fraction of a crystal component is Vc and a volume fraction of an amorphous component is Va. It is composed of an oxide semiconductor. [Selection] Figure 1 |