http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009267029-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f187eb8cb31e70d4acd428dd8beedd4f |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-12 |
| filingDate | 2008-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_038f1bfef683eed9cab856bd3d1da531 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6fccc9b84ca02f714fd06f8feb07a6cf |
| publicationDate | 2009-11-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2009267029-A |
| titleOfInvention | Nitride semiconductor device and method for manufacturing nitride semiconductor device |
| abstract | PROBLEM TO BE SOLVED: To provide a nitride semiconductor element and its manufacturing method in which the resistance of a group III nitride semiconductor is reduced to the maximum without depending on the type of a gate insulating film. A nitride semiconductor device includes an n − -type GaN drift layer 6, a p-type GaN channel layer 3 and an n + -type GaN source layer 4 and a trench 7 straddling these layers. The laminated structure portion 1 is formed. A gate insulating film 11 is formed on the inner side wall 8 and the inner bottom wall 9 of the nitride semiconductor multilayer structure portion 1 facing the trench 7. At least an n − -type GaN drift is formed on the gate insulating film 11 with the gate insulating film 11 interposed therebetween. A gate electrode 12 facing the layer 6 and the p-type GaN channel layer 3 is formed. Then, a p-type GaN layer 10 is formed on the inner bottom wall 9 of the n − -type GaN drift layer 6 so as to face the gate electrode 12 with the gate insulating film 11 interposed therebetween. [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102184956-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9349856-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014192174-A |
| priorityDate | 2008-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.