| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66765 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
2009-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_75c6267d8c775da162e94c833c3742ac
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ec984250f5928f06aa2a6059a2a12f9e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f9854e3e445238b3183f194c11719fac |
| publicationDate |
2009-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2009260277-A |
| titleOfInvention |
Thin film transistor and display device |
| abstract |
A problem relating to an on-current and an off-current of a thin film transistor is solved. In addition, a thin film transistor capable of high-speed operation is provided. A gate insulating layer that covers a gate electrode, a microcrystalline semiconductor layer provided on the gate insulating layer, an amorphous semiconductor layer overlapping with the microcrystalline semiconductor layer and the gate insulating layer, and an amorphous semiconductor And a pair of impurity semiconductor layers to which an impurity element imparting one conductivity type which forms a source region or a drain region is added, and the gate insulating layer is in contact with an end portion of the microcrystalline semiconductor layer A thin film transistor having a step in the vicinity and having a second film thickness outside the microcrystalline semiconductor layer thinner than the first film thickness in contact with the microcrystalline semiconductor layer. [Selection] Figure 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012235097-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-5421357-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2011141954-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9401396-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10310347-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9202929-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2017042941-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011151381-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2017042941-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101840622-B1 |
| priorityDate |
2008-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |