http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009252875-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73ebc284a55d5daf0e209d6186c9e65c |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247 |
| filingDate | 2008-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8009d2c74d8cb4af8c54e4fa37755c86 |
| publicationDate | 2009-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2009252875-A |
| titleOfInvention | Semiconductor device and manufacturing method thereof |
| abstract | PROBLEM TO BE SOLVED: To provide a semiconductor device or the like that reduces the influence of hot carrier injection into a charge storage layer in a peripheral circuit region. A semiconductor device comprising: at least one first transistor of at least one nonvolatile memory cell; and at least one second transistor for driving the at least one nonvolatile memory cell. Including. The first transistor includes a first gate insulating layer, a first gate charge storage layer, and a second gate insulating layer. The second transistor includes a third gate insulating layer, a second gate charge storage layer, and a fourth gate insulating layer. The first charge storage capability of all or part of the second gate charge storage layer (22b ′) subjected to ion implantation using a fluorine-based gas and / or a hydrogen-based gas may be a fluorine-based gas and / or hydrogen. The second charge storage capacity of the second gate charge storage layer (22b ′) before the ion implantation using the system gas is performed is lower than the second charge storage capability of all or part of the second gate charge storage layer (22b ′). [Selection] Figure 2 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8604536-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009260071-A |
| priorityDate | 2008-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 41.