http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009248467-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73ebc284a55d5daf0e209d6186c9e65c |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B41J2002-14411 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B41J2-055 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B41J2-045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B41J2-16 |
| filingDate | 2008-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b31e970e9f51e5ce4d8323041eb5adb7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_395940af1478be9a1dcd6cb8a3627e51 |
| publicationDate | 2009-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2009248467-A |
| titleOfInvention | Method for manufacturing electrostatic actuator, method for manufacturing droplet discharge head |
| abstract | An electrostatic actuator is provided which ensures anodic bonding strength between a silicon substrate and a glass substrate, and hardly causes variations in flatness of each insulating film corresponding to a plurality of diaphragms. A step of forming a first insulating film 8a made of a dielectric material having a relative dielectric constant higher than that of silicon oxide on a silicon substrate 2 and patterning the first insulating film 8a so that the silicon substrate 2 is a glass substrate 3 The first insulating film 8a is removed from the portion that will be in close contact with the substrate, and the first insulating film 8a of the silicon substrate 2 is patterned on the surface on which the first insulating film 8a is patterned. The step of forming the second insulating film 8b to a thickness that covers the first insulating film 8a and the surface of the silicon substrate 2 on which the second insulating film 8b is formed are exposed until the first insulating film 8a is exposed. A step of flatly polishing and a step of anodically bonding the second insulating film surface 8b of the silicon substrate 2 and the glass substrate 3 so as to correspond to the first insulating film 8a and the individual electrode 5 are provided. [Selection] Figure 5 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2011099316-A1 |
| priorityDate | 2008-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 49.