| abstract |
An object of the present invention is to provide a metal-polishing liquid capable of achieving both high polishing speed and low dishing when polishing an object to be polished (wafer), and a chemical mechanical polishing method using the same. To do. A metal for use in chemical mechanical polishing in a semiconductor device manufacturing process, comprising a polymer having an azole group having 3 or 4 nitrogen atoms in the side chain, an oxidizing agent, and an organic acid. Polishing fluid. [Selection figure] None |