http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009238796-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_60e21de07fa18fc54e2150daffc14654 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-323 |
| filingDate | 2008-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a80309bc13c907b89528aad910e39c50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bd2272d1b94023f30183de53a393626e |
| publicationDate | 2009-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2009238796-A |
| titleOfInvention | Semiconductor laser and manufacturing method of semiconductor laser |
| abstract | A semiconductor laser having excellent operation mode controllability and a method for manufacturing the semiconductor laser are provided. In a semiconductor laser in which an active layer region A and a control layer region B, which is a region other than the active layer region, are alternately connected in the light propagation direction, the active layer 12 in the active layer region A and the control layer A diffraction grating is provided above or below the control layer 16 in the region B, so that the coupling coefficient κ a of the diffraction grating in the active layer region A is different from the coupling coefficient κ t of the diffraction grating in the control layer region B. [Selection] Figure 1 |
| priorityDate | 2008-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 16.