http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009231844-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0950e9df7f0e1b73efee1bda859951ad |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788 |
| filingDate | 2009-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c8037fe016ee0bee6d0a286f779b3013 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6badc6368f3694af21d4d615da4ce1b1 |
| publicationDate | 2009-10-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2009231844-A |
| titleOfInvention | Nonvolatile semiconductor memory device and manufacturing method thereof |
| abstract | A nonvolatile semiconductor memory device having a MONOS type memory cell with the highest possible charge trapping efficiency and a method for manufacturing the same are provided. Source / drain regions 4a and 4b provided apart from a semiconductor substrate 5, a tunnel insulating film 12 provided on a semiconductor substrate 5 between the source region and the drain regions 4a and 4b, and tunnel insulation A charge storage film 13 provided on the film 12 for trapping charges, a control gate electrode 16 provided on the charge storage film 13, and provided between the charge storage film 13 and the control gate electrode 16. A memory cell including a transition alumina layer 14a provided on the film 13 side and an alumina film having an α-phase alumina layer 15a provided on the control gate electrode 16 side. [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9935122-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190099047-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102383347-B1 |
| priorityDate | 2009-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 36.