http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009231819-A

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filingDate 2009-02-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d79ac1045aa5b446d33a890b903f625a
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publicationDate 2009-10-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2009231819-A
titleOfInvention Method for manufacturing SOI substrate
abstract Even when a plurality of semiconductor substrates are bonded to a base substrate, it is an object to improve bonding efficiency and suppress bonding defects. A plurality of semiconductor substrates are provided on a first substrate support, a base substrate is provided on a second substrate support, and a surface of the plurality of semiconductor substrates and a surface of the base substrate are opposed to each other with a predetermined interval. As described above, the second substrate support base is disposed above the first substrate support base, the plurality of semiconductor substrates or the base substrate is charged, and the distance between the surface of the plurality of semiconductor substrates and the surface of the base substrate is reduced. The plurality of semiconductor substrates are brought into contact with the surface of the base substrate, and the surface of the base substrate and the surfaces of the plurality of semiconductor substrates are joined. [Selection] Figure 1
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