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filingDate 2008-03-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2009-09-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2009212398-A
titleOfInvention Nonvolatile semiconductor memory device and manufacturing method thereof
abstract A non-volatile semiconductor memory device that suppresses variations in gate length of a control gate and increases a manufacturing yield is provided. A nonvolatile semiconductor memory device includes a charge storage layer formed on a channel region of a semiconductor substrate, a control gate electrode formed on the charge storage layer, and a control gate electrode formed on the control gate electrode. And a word gate electrode 20 formed on the side of the control gate electrode 30 and the spacer layer 17 with an insulating layer 15 interposed therebetween. The upper surface of the spacer layer 17 becomes lower as the distance from the word gate electrode 20 increases. [Selection] Figure 13
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