http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009206181-A

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-227
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-343
filingDate 2008-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cacdfad87707f3652d4d2a5c13b892c4
publicationDate 2009-09-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2009206181-A
titleOfInvention Semiconductor laser and method of manufacturing the semiconductor laser
abstract A semiconductor laser having a structure capable of avoiding the formation of a barrier that prevents hole injection and controlling the embedding of a quantum wire and a method of manufacturing the semiconductor laser are provided. A semiconductor laser according to the present invention includes a first optical confinement layer 15 provided on a first cladding layer 13 made of an n-type semiconductor, a plurality of quantum wires 17 periodically arranged, and each quantum beam. A buried semiconductor region 19 having a first portion provided on the side surface of the fine wire 17 and the first optical confinement layer 15 and a second portion provided on the upper surface of each quantum fine wire; and a second optical confinement layer 21 made of a p-type GaInAsP semiconductor and provided on the embedded semiconductor region 19. Therefore, the buried semiconductor region 19 is also formed on the upper surface of the quantum wire 17. On the other hand, since the embedded semiconductor region 19 is made of an AlInAs semiconductor, it does not serve as a barrier that prevents hole injection. [Selection] Figure 1
priorityDate 2008-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 21.