http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009201174-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
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filingDate 2008-02-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_788128dc1ce158150081c02acf19b76a
publicationDate 2009-09-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2009201174-A
titleOfInvention Power supply circuit and display device
abstract The efficiency of a power supply circuit is improved by reducing the resistance of a gate electrode of a charge transfer transistor. An auxiliary gate electrode is provided on the gate electrodes of T1 to T4 to form a double wiring structure, and the resistance value of the gate electrode as a whole is lowered. T1 will be described. The gate electrode 104 Auxiliary gate electrode 108 is formed overlapping each other. The auxiliary gate electrode 108 is connected to the gate electrode 104 on one side of T1. That is, a contact hole CH1 is formed in the interlayer insulating film 107 on the gate electrode 104 extending on the glass substrate 100 outside the polysilicon layer 102, and the auxiliary gate electrode 108 is electrically connected to the gate electrode 104 through the contact hole CH1. It is connected to the. The auxiliary gate electrode 108 is preferably made of, for example, aluminum or an aluminum alloy, and preferably has a sheet resistance lower than that of the gate electrode 104. [Selection] Figure 1
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7262049-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2021010225-A
priorityDate 2008-02-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 22.