http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009197333-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_dca153f19868f747eeea612b047a9e7c |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-08 |
| filingDate | 2009-05-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c0f79b67917e3b8e651071a480614206 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_53d723830703b5d991adf4d24da9fd6f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5bc85c46f522333fb8052cb368613359 |
| publicationDate | 2009-09-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2009197333-A |
| titleOfInvention | Zinc oxide thin film |
| abstract | A method for forming a zinc oxide thin film capable of forming a film having good crystallinity over a large area at a high film formation rate, and a zinc oxide thin film formed by this method are provided. A high-density plasma beam PB by arc discharge is supplied to a vapor deposition material mainly composed of zinc oxide loaded in a hearth 51 arranged as an anode in a film formation chamber to evaporate the vapor deposition material. A thin film is obtained by ionizing and depositing a vapor deposition substance on the surface of the substrate W arranged facing the vapor deposition material. At this time, an upper magnetic field close to the hearth 51 is controlled by a magnetic field control member disposed around the hearth 51, and a voltage is applied so that the hearth 51 has a potential of +30 to +60 V with respect to the vacuum vessel 10. . [Selection] Figure 1 |
| priorityDate | 2009-05-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 18.