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publicationDate 2009-08-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2009194195-A
titleOfInvention Semiconductor device and manufacturing method thereof
abstract Provided is a Cu wiring forming method in which Cu elution does not occur during CMP when a Ru material is used as a barrier metal film for Cu wiring. A step (d) of removing a second barrier metal film (Ru film) formed on the first barrier metal on the upper surface of the interlayer insulating film, and after the step (d), the first and And (e) depositing a seed copper (Cu) film on the second barrier metal film. Thus, by removing the second barrier metal film on the upper surface before forming the seed copper film, the copper effect of this second barrier metal film and copper elutes into the slurry. To prevent. [Selection] Figure 1
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013504886-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011066274-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012074608-A
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2011114989-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011216867-A
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