http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009182009-A

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0c468e687b43595cae7cb1c2667678f1
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
filingDate 2008-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ce79e6372827fe58823f07626f17da02
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publicationDate 2009-08-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2009182009-A
titleOfInvention Vapor growth apparatus and vapor growth method
abstract In a vapor phase growth apparatus using a horizontal disk type susceptor, the vapor phase growth which prevents the sticking phenomenon between a wafer and its peripheral part and improves the semiconductor productivity of vapor phase growth film formation. An object is to provide an apparatus and a vapor phase growth method. A vapor phase growth apparatus (1) is provided on a rotation driving means (6) for rotating a wafer (W) at a predetermined rotational speed, a susceptor (5) fixed on the rotation driving means (6), and the susceptor (5). A holding member 12 mainly composed of a material having a lower linear expansion coefficient than silicon (Si) for holding the wafer W in contact with at least one of the side surface of the wafer W and the back surface of the wafer W. It is characterized by having. [Selection] Figure 1
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2013094680-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013012665-A
priorityDate 2008-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 25.