http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009182009-A
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0c468e687b43595cae7cb1c2667678f1 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-458 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
filingDate | 2008-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ce79e6372827fe58823f07626f17da02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ea0bf85aaa1e47d8f560dd40159f349c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_40204d7fe59abf07f5c038f402059aa7 |
publicationDate | 2009-08-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2009182009-A |
titleOfInvention | Vapor growth apparatus and vapor growth method |
abstract | In a vapor phase growth apparatus using a horizontal disk type susceptor, the vapor phase growth which prevents the sticking phenomenon between a wafer and its peripheral part and improves the semiconductor productivity of vapor phase growth film formation. An object is to provide an apparatus and a vapor phase growth method. A vapor phase growth apparatus (1) is provided on a rotation driving means (6) for rotating a wafer (W) at a predetermined rotational speed, a susceptor (5) fixed on the rotation driving means (6), and the susceptor (5). A holding member 12 mainly composed of a material having a lower linear expansion coefficient than silicon (Si) for holding the wafer W in contact with at least one of the side surface of the wafer W and the back surface of the wafer W. It is characterized by having. [Selection] Figure 1 |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2013094680-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013012665-A |
priorityDate | 2008-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.