| abstract |
It is an object of the present invention to provide a semiconductor device including a microcrystalline semiconductor film having favorable quality and a method for manufacturing the semiconductor device. In a thin film transistor formed using a microcrystalline semiconductor film, in order to improve the quality of the microcrystalline semiconductor film formed in the initial stage of film formation, the top layer of a gate insulating film has a yttria stable structure having a fluorite structure. A zirconia fluoride film is formed. By depositing a microcrystalline semiconductor film thereon, particularly in the vicinity of the interface with the base, the crystallinity of the base is affected and good crystallinity is obtained. Further, before the microcrystalline semiconductor film is formed, surface plasma treatment is performed, and the microcrystalline semiconductor film is deposited in a state where it is easily influenced by the crystallinity of the base. Further, germanium is added to the microcrystalline semiconductor film so that the base yttria-stabilized zirconia and the crystal of the microcrystalline semiconductor film easily match. [Selection] Figure 6 |