| abstract |
[Problem] To provide a polishing composition capable of suppressing generation of a surface step and achieving a high polishing rate in a polishing step in the production of a wiring structure. Abrasive grains, processing acceleration, R-POE (wherein R represents an alkyl group having 10 to 16 carbon atoms having a branched structure, and POE represents a polyoxyethylene chain), and HLB A polishing composition comprising a nonionic surfactant, an anionic surfactant, a protective film-forming agent, an oxidizing agent, and water, wherein 7 is 12 to 12. [Selection figure] None |