http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009163874-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36d1d9c59848bff6ad5f55923d1290f5 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02B70-16 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04 |
| filingDate | 2009-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c2c0062b6909749c46312b88c6fd839d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_05254aeace8a9486bfdea9a4cb80b86f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_68f48327b712fce800cfd2484570358c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b86a0a5c71f31aeba7eefa5d703ecf64 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_536bcce3544bb4fb05764904b79b70e1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_da15c588e46c585fce3f990930686120 |
| publicationDate | 2009-07-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2009163874-A |
| titleOfInvention | Semiconductor device |
| abstract | A semiconductor device with good withstand voltage characteristics of a transistor is provided. In this semiconductor integrated circuit device, a selection circuit 371 selects a potential VPP from a normal operation positive pump circuit 11 when a selection signal SELP is at “H” level, and the selection signal SELP is at “L” level. In this case, the external potential VEX is selected, and the selected potential is output as VP. Inverter 372 inverts the logic level of selection signal SELP, converts the voltage level from the level of external power supply potential EXVDD to the level of potential VPP, and outputs the result. The level conversion circuit includes P-channel MOS transistors 382 and 384 having their gate electrodes both receiving the output potential of inverter 372 and having their sources connected to output nodes N131 and N132, respectively. Therefore, the breakdown voltage characteristics of P channel MOS transistors 381 and 383 are improved. [Selection] Figure 19 |
| priorityDate | 2009-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 40.